DMA150YC1600NA 34 2 1 half 3~ bridge, common cathode standard rectifier part number DMA150YC1600NA backside: isolated features / advantages: applications: package: planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for single and three phase bridge configurations sot-227b (minibloc) industry standard outline rohs compliant epoxy meets ul 94v-0 base plate: copper internally dcb isolated advanced power cycling isolation voltage: v~ 3000 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact your local sales offi ce. should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms and conditions of usage rrm 1600 i 150 fsm 800 dav v = va a == i 3~ rectifier ixys reserves the right to change limits, condition s and dimensions. 20180425c data according to iec 60747and per semiconductor un less otherwise specified ? 2018 ixys all rights reserved
DMA150YC1600NA v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i r v i a v f 1.21 r 0.6 k/w r min. 150 v rsm v 100 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 95 p tot 165 w t = 25c c r k/w 50 1600 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.62 t = 25c vj 150 v f0 v 0.87 t = c vj 150 r f 5.6 m ? v 1.16 t = c vj i = a f v 50 1.69 i = a f 150 i = a f 150 threshold voltage slope resistance for power loss calculation only a 125 v rrm v 1600 max. repetitive reverse blocking voltage t = 25c vj c j 25 junction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 800 865 2.31 2.25 aa a a 680 735 3.20 3.12 1600 dav d = rectangular ? bridge output current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1700 0.10 ixys reserves the right to change limits, condition s and dimensions. 20180425c data according to iec 60747and per semiconductor un less otherwise specified ? 2018 ixys all rights reserved
DMA150YC1600NA ratings abcd zyyww xxxxx product marking logo part no. datecode assembly code assembly line ? d m a 150 yc 1600 na part description diode standard rectifier (up to 1800v) half 3~ bridge, common cathode sot-227b (minibloc) = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 1.5 mounting torque 1.1 t vj c 150 virtual junction temperature -40 weight g 30 symbol definition typ. max. min. conditions operation temperature unit m t nm 1.5 terminal torque 1.1 v v t = 1 second v t = 1 minute isolation voltage mm mm 10.5 3.2 8.6 6.8 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 150 a per terminal 125 -40 terminal to terminal sot-227b (minibloc) similar part package voltage class dma150ya1600na sot-227b (minibloc) 1600 delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol DMA150YC1600NA 509174 tube 10 DMA150YC1600NA standard 3000 isol t stg c 150 storage temperature -40 2500 threshold voltage v 0.87 m ? v 0 max r 0 max slope resistance * 4.4 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 150 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20180425c data according to iec 60747and per semiconductor un less otherwise specified ? 2018 ixys all rights reserved
DMA150YC1600NA 34 2 1 outlines sot-227b (minibloc) ixys reserves the right to change limits, condition s and dimensions. 20180425c data according to iec 60747and per semiconductor un less otherwise specified ? 2018 ixys all rights reserved
DMA150YC1600NA 0.001 0.01 0.1 1 300 400 500 600 700 2 3 4 5 6 7 8 9 01 1 10 2 10 3 10 4 0.5 1.0 1.5 2.0 0 50 100 150 2 0 0 0 10 20 30 40 50 60 0 20 40 60 80 1 10 100 1000 10000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150 175 0 50 100 150 i f [a] v f [v] i fsm [a] t [s] i 2 t [a 2 s] t [ms] p tot [w] i f(av)m [a] t amb [c] i f(av)m [a] t c [c] z thjc [ k/w] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current vs. time per diode fig. 3 i 2 t versus time per diode fig. 4 power dissipation vs. forward current and ambient temperature per diode fig. 5 max. forward current vs. case temperature per diode fig. 6 transient thermal impedance junction to case vs. ti me per diode t [ms] constants for z thjc calculation: i r thi (k/w) t i (s) 1 0.0240 0.01000 2 0.0160 0.00001 3 0.0500 0.00500 4 0.1800 0.02300 5 0.3300 0.22000 0 25 50 75 100 125 150 175 50 hz, 80%v rrm t vj = 45c t vj = 150c t vj = 45c v r = 0 v t vj = 150c r thha = 0.2 k/w 0.4 k/w 0.6 k/w 0.8 k/w 1.0 k/w 2.0 k/w dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 150c t vj = 125c t vj = 25c dc = 1 0.5 0.4 0.33 0.17 0.08 rectifier ixys reserves the right to change limits, condition s and dimensions. 20180425c data according to iec 60747and per semiconductor un less otherwise specified ? 2018 ixys all rights reserved
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